ROHM's IGBT, Insulated Gate Bipolar Transistor, contributes to achieve higher efficiency and energy saving for wide range of high voltage and high current applications.
Field Stop Trench IGBT (106)
Ignition IGBT (5)
ROHM's products are realized low Vce(sat) and Low switching loss by ROHM's trench gate and thin wafer technology.
ROHM's ignition IGBTs for Automotive are High reliability product which achieved both low Vce(sat) and high avalanche energy.